The PECVD Technique is a widely used method for thin film generation. The abbreviation PECVD stands for “Plasma Enhanced Chemical Vapor Deposition” and is a special form of chemical vapor deposition (CVD). As with conventional CVD, chemicals from the gas phase are deposited as a layer on a solid substrate.
The plasma supplies the energy to break down the precursor chemicals required for the process and make them available in the form of radicals for the desired reaction. The plasma is often generated by microwave or high frequency.
Common processes are e.g. the production of amorphous silicon or DLC layers. In contrast to CVD, the process takes place at comparatively low temperatures and allows the use of temperature-sensitive substrates.
robeko offers a wide range of products for PECVD coating in the areas of components and technology.